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Title: Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation
Authors: Kimura, Mutsumi
Kamada, Yudai
Fujita, Shizuo
Hiramatsu, Takahiro
Matsuda, Tokiyoshi
Furuta, Mamoru
Hirao, Takashi
Issue Date: 10-Oct-2010
Publisher: American Institute of Physics
Journal Title: Aplied Physics Letters
Volume: 97
Issue: 16
Start Page: 163503-1
End Page: 163503-3
Abstract: We analyzed the photoleakage current (Ileak) in ZnO thin-film transistors using device simulation. The dependences of Ileak on the location of light irradiation and drain voltage are reproduced by considering a Schottky barrier at the source contact using a two-dimensional device simulation. First, carrier generation is induced by light irradiation, the generated holes accumulate near the source contact, and some of these are captured in the donor traps. Next, the Schottky barrier becomes narrow, and electron injection increases via a tunneling effect. This discussion also suggests that the off-current is exceedingly low because the Schottky barrier prevents electron injection.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 97, 163503 (2010) and may be found at http://link.aip.org/link/?apl/97/163503.
DOI: http://dx.doi.org/10.1063/1.3502563
Type: Journal Article
URI: http://hdl.handle.net/10173/954
Appears in Collections:古田, 守 (FURUTA, Mamoru)

Please use this identifier to cite or link to this item: http://hdl.handle.net/10173/954

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