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Title: Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors
Authors: Kamada, Yudai
Fujita, Shizuo
Kimura, Mutsumi
Hiramatsu, Takahiro
Matsuda, Tokiyoshi
Furuta, Mamoru
Hirao, Takashi
Issue Date: 10-Mar-2011
Publisher: American Institute of Physics
Journal Title: Aplied Physics Letters
Volume: 98
Issue: 10
Start Page: 103512-1
End Page: 103512-3
Abstract: We investigated effects of chemical stoichiometry of ZnO channel, controlled by oxygen partial pressure during deposition, on bias instability for ZnO thin-film transistors. Parallel threshold voltage shifts were mainly enhanced under gate bias stresses due to charge trapping when O-rich ZnO was used for channel layer. On the contrary, negative threshold voltage shifts were observed under both gate and drain bias stresses when Zn-rich ZnO was used for channel layer. This degradation was enhanced regardless of the bias polarity and the direction, attributing to electrically activated trap generations.
Rights: Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 98, 103512 (2011) and may be found at http://link.aip.org/link/?apl/98/103512.
DOI: http://dx.doi.org/10.1063/1.3557066
Type: Journal Article
URI: http://hdl.handle.net/10173/953
Appears in Collections:学術雑誌論文
古田, 守 (FURUTA, Mamoru)

Please use this identifier to cite or link to this item: http://hdl.handle.net/10173/953

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