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Title: Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect
Authors: Urakawa, Satoshi
Tomai, Shigekazu
Ueoka, Yoshihiro
Yamazaki, Haruka
Kasami, Masashi
Yano, Koki
Wang, Dapeng
Furuta, Mamoru
Horita, Masahiro
Ishikawa, Yasuaki
Uraoka, Yukiharu
Issue Date: 6-Feb-2013
Publisher: American Institute of Physics
Journal Title: Aplied Physics Letters
Volume: 102
Issue: 5
Start Page: 053506-1
End Page: 053506-4
Abstract: Stability is the most crucial issue in the fabrication of oxide thin-film transistors (TFTs) for next-generation displays. We have investigated the thermal distribution of an InSnZnO TFT under various gate and drain voltages by using an infrared imaging system. An asymmetrical thermal distribution was observed at a local drain region in a TFT depending on bias stress. These phenomena were decelerated or accelerated with stress time. We discussed the degradation mechanism by analyzing the electrical properties and thermal distribution. We concluded that the degradation phenomena are caused by a combination of Joule heating and the hot carrier effect.
Rights: Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 102, 053506 (2013) and may be found at http://link.aip.org/link/?apl/102/053506.
DOI: http://dx.doi.org/10.1063/1.4790619
Type: Journal Article
URI: http://hdl.handle.net/10173/952
Appears in Collections:古田, 守 (FURUTA, Mamoru)
学術雑誌論文

Please use this identifier to cite or link to this item: http://hdl.handle.net/10173/952

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