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Title: Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge
Authors: Yamada, Takahiro
Miyake, Aki
Kishimoto, Seiichi
Makino, Hisao
Yamamoto, Naoki
Yamamoto, Tetsuya
Issue Date: 1-Aug-2007
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 91
Issue: 5
Start Page: 051915-1
End Page: 051915-3
Abstract: Low resistivity Ga-doped ZnO films were prepared on a glass substrate by ion plating with direct current arc discharge. Thickness dependent changes in the electrical properties of the films are reported, focusing on the thin films of less than 100 nm thickness. Structural analyses showed that the thinnest film of 30 nm thickness consists of well-oriented columnar grains normal to the substrate, and the resistivity was as low as 4.4×10−4 Ω cm. The changes in lattice strain and c-axis fluctuation with the growth of grains are also shown to be associated with the electrical properties.
Rights: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 051915 (2007) and may be found at http://link.aip.org/link/?apl/91/051915
DOI: http://dx.doi.org/10.1063/1.2767213
Type: Journal Article
URI: http://hdl.handle.net/10173/588
Appears in Collections:山本, 哲也 (YAMAMOTO, Tetsuya)
牧野, 久雄 (MAKINO, Hisao)
山本, 直樹 (YAMAMOTO, Naoki)
学術雑誌論文

Please use this identifier to cite or link to this item: http://hdl.handle.net/10173/588

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