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Title: Influence of sputtering pressure on band gap of Zn_<1−x>Mg_xO thin films prepared by radio frequency magnetron sputtering
Authors: Wang, Dapeng
Narusawa, Tadashi
Kawaharamura, Toshiyuki
Furuta, Mamoru
Li, Chaoyang
Issue Date: 2011
Publisher: American Institute of Physics
Journal Title: Journal of Vacuum Science and Technology B
Volume: 29
Issue: 5
Start Page: 051205-1
End Page: 051205-4
Abstract: Zn_<1−x> Mg_x O thin films were deposited onto quartz glass substrates using a radio frequency magnetron sputtering at various depositionpressures. It was found that the Mg concentration in the Zn_<1−x> Mg_xO thin films significantly increased by decreasing the depositionpressure from 9 to 1 Pa, which contributed to an increase in the band gap of the ZnMgO films. In addition, the Zn_<1−x> Mg_xO thin films, which had a hexagonal wurtzite structure when obtained by high pressure deposition (7 and 9 Pa) at x ≤ 0.478, had a cubic rock-salt crystal structure when deposition pressure was decreased to 1-5 Pa at x ≥ 0.482. These results show that the band gap of the ZnMgO thin films could be easily modulated only by adjusting of the deposition pressure during the radio frequency sputtering process.
Rights: © 2011 American Vacuum Society
American Institute of Physics, Dapeng Wang, Tadashi Narusawa, Toshiyuki Kawaharamura, Mamoru Furuta and Chaoyang Li, Journal of Vacuum Science and Technology B, 29(5), 2011, p051205-1-4
Rights URI: http://scitation.aip.org/content/avs/journal/jvstb/29/5/10.1116/1.3622316
DOI: 10.1116/1.3622316
Type: Journal Article
URI: http://hdl.handle.net/10173/1379
Appears in Collections:学術雑誌論文

Please use this identifier to cite or link to this item: http://hdl.handle.net/10173/1379

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