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Browsing by Author Furuta, Mamoru

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Issue DateTitleAuthor(s)Journal Name
Nov-2010Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial PressuresFuruta, Mamoru; Kamada, Yudai; Kimura, Mutsumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Hiroshi; Li, Chaoyang; Fujita, Shizuo; Hirao, TakashiIEEE Electron Device Letters
10-Mar-2011Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistorsKamada, Yudai; Fujita, Shizuo; Kimura, Mutsumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, TakashiAplied Physics Letters
Jun-2012Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure DepositionFuruta, Mamoru; Kawaharamura, Toshiyuki; Wang, Depang; Toda, Tatsuya; Hirao, TakashiIEEE Electron Device Letters
2011Influence of sputtering pressure on band gap of Zn_<1−x>Mg_xO thin films prepared by radio frequency magnetron sputteringWang, Dapeng; Narusawa, Tadashi; Kawaharamura, Toshiyuki; Furuta, Mamoru; Li, ChaoyangJournal of Vacuum Science and Technology B
10-Oct-2010Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulationKimura, Mutsumi; Kamada, Yudai; Fujita, Shizuo; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, TakashiAplied Physics Letters
6-Feb-2013Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effectUrakawa, Satoshi; Tomai, Shigekazu; Ueoka, Yoshihiro; Yamazaki, Haruka; Kasami, Masashi; Yano, Koki; Wang, Dapeng; Furuta, Mamoru; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, YukiharuAplied Physics Letters
2012Well-arrayed ZnO nanostructures formed by multi-annealing processes at low temperatureWang, Dapeng; Li, Zeming; Kawaharamura, Toshiyuki; Furuta, Mamoru; Narusawa, Tadashi; Li, ChaoyangPhysica Status Solidi (C)
Showing results 1 to 7 of 7

 

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