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Browsing by Author Furuta, Mamoru

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Showing results 1 to 12 of 12
Issue DateTitleAuthor(s)Journal Name
Nov-2010Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial PressuresFuruta, Mamoru; Kamada, Yudai; Kimura, Mutsumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Hiroshi; Li, Chaoyang; Fujita, Shizuo; Hirao, TakashiIEEE Electron Device Letters
10-Mar-2011Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistorsKamada, Yudai; Fujita, Shizuo; Kimura, Mutsumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, TakashiAplied Physics Letters
Jun-2012Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure DepositionFuruta, Mamoru; Kawaharamura, Toshiyuki; Wang, Depang; Toda, Tatsuya; Hirao, TakashiIEEE Electron Device Letters
2011Influence of sputtering pressure on band gap of Zn_<1−x>Mg_xO thin films prepared by radio frequency magnetron sputteringWang, Dapeng; Narusawa, Tadashi; Kawaharamura, Toshiyuki; Furuta, Mamoru; Li, ChaoyangJournal of Vacuum Science and Technology B
10-Oct-2010Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulationKimura, Mutsumi; Kamada, Yudai; Fujita, Shizuo; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, TakashiAplied Physics Letters
6-Feb-2013Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effectUrakawa, Satoshi; Tomai, Shigekazu; Ueoka, Yoshihiro; Yamazaki, Haruka; Kasami, Masashi; Yano, Koki; Wang, Dapeng; Furuta, Mamoru; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, YukiharuAplied Physics Letters
2012Well-arrayed ZnO nanostructures formed by multi-annealing processes at low temperatureWang, Dapeng; Li, Zeming; Kawaharamura, Toshiyuki; Furuta, Mamoru; Narusawa, Tadashi; Li, ChaoyangPhysica Status Solidi (C)
31-Jul-2012ナノテクノロジー研究所のアクティビティレポート 2011新田, 紀子; 王, 大鵬; 川原村, 敏幸; 李, 朝陽; 古田, 守; 八田, 章光; 平尾, 孝; Nitta, Noriko; Wang, Dapeng; Kawaharamura, Toshiyuki; Li, Chaoyang; Furuta, Mamoru; Hatta, Akimitsu; Hirao, Takashi高知工科大学紀要
31-Jul-2012ミストを利用した薄膜作製技術「ミストCVD法」の開発と「a-IGZO/AlOx 構造を有する酸化物 TFTの大気圧形成」川原村, 敏幸; 王, 大鵬; 古田, 守; Kawaharamura, Toshiyuki; Wang, Dapeng; Furuta, Mamoru高知工科大学紀要
29-Jun-2009次世代ディスプレイに向けた酸化亜鉛薄膜トランジスタ技術古田, 守; 平松, 孝浩; 松田, 時宜; 新田, 浩士; 平尾, 孝; Furuta, Mamoru; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Nitta, Hiroshi; Hirao, Takashi高知工科大学紀要
29-Jul-2010酸化亜鉛(ZnO)トランジスタの開発とその次世代デバイスへの応用古田, 守; 平松, 孝浩; 松田, 時宜; 平尾, 孝; Furuta, Mamoru; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Hirao, Takashi高知工科大学紀要
31-Jul-2012酸化亜鉛薄膜の欠陥準位密度が薄膜トランジスタの電気特性・信頼性へ与える影響古田, 守; 島川, 伸一; Furuta, Mamoru; Shimakawa, Shin-ichi高知工科大学紀要
Showing results 1 to 12 of 12

 

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